A new approach for the extraction of SPICE MOSFET Level-3 static model parameters

An iteration procedure obtained by using a new approach is presented for the extraction of SPICE Level-3 MOS Transistor static model parameters KP, V_TH, θ, V_MAX and R_s(=R_D). The procedure uses both gate and drain characteristics or one of these in the triode region of operation. As well as the triode region parameters, N_FS and χ can be found in the overall procedure. Results of the procedure have been compared with the experimental results. It is obvious from this comparison that the new approach is effective for determination of Level-3 model parameters. In addition to that, it is possible to use this new approach for other models which can be represented by polynomial equations in which the parameters are coefficients as in eqn (2)