Title :
An electrical monitor of deep trench depth
Author :
Roggenbauer, T. ; Khemka, V. ; Parthasarathy, V. ; Puchades, I. ; Zhu, R.
Author_Institution :
Motorola SPS, Chandler, AZ, USA
Abstract :
A novel, non-destructive measurement technique has been used to electrically monitor the depth of a deep trench in a submicron smart power process. The ratio of the injected emitter current to the captured collector current in a parasitic bipolar transistor has demonstrated the ability to resolve variations in trench depth of <0.2 /spl mu/m and was used to qualify a new etch process.
Keywords :
bipolar integrated circuits; integrated circuit testing; nondestructive testing; power integrated circuits; 0.2 micron; captured collector current; deep trench depth; electrical monitor; etch process; injected emitter current; nondestructive measurement technique; parasitic bipolar transistor; submicron smart power process; Bipolar transistors; Etching; Implants; Isolation technology; Measurement techniques; Monitoring; Optical filters; Thermal resistance; Voltage; Wavelength measurement;
Conference_Titel :
Microelectronic Test Structures, 2003. International Conference on
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-7653-6
DOI :
10.1109/ICMTS.2003.1197363
