DocumentCode
3431120
Title
An electrical monitor of deep trench depth
Author
Roggenbauer, T. ; Khemka, V. ; Parthasarathy, V. ; Puchades, I. ; Zhu, R.
Author_Institution
Motorola SPS, Chandler, AZ, USA
fYear
2003
fDate
17-20 March 2003
Firstpage
19
Lastpage
21
Abstract
A novel, non-destructive measurement technique has been used to electrically monitor the depth of a deep trench in a submicron smart power process. The ratio of the injected emitter current to the captured collector current in a parasitic bipolar transistor has demonstrated the ability to resolve variations in trench depth of <0.2 /spl mu/m and was used to qualify a new etch process.
Keywords
bipolar integrated circuits; integrated circuit testing; nondestructive testing; power integrated circuits; 0.2 micron; captured collector current; deep trench depth; electrical monitor; etch process; injected emitter current; nondestructive measurement technique; parasitic bipolar transistor; submicron smart power process; Bipolar transistors; Etching; Implants; Isolation technology; Measurement techniques; Monitoring; Optical filters; Thermal resistance; Voltage; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 2003. International Conference on
Conference_Location
Monterey, CA, USA
Print_ISBN
0-7803-7653-6
Type
conf
DOI
10.1109/ICMTS.2003.1197363
Filename
1197363
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