DocumentCode
3431139
Title
Feasibility of a CWDM-based in-situ monitoring system for characterizing porous silicon growth
Author
Keating, Adrian ; James, Tim ; Musca, Charlie
Author_Institution
Sch. of Mech. Eng., Univ. of Western Australia, Crawley, WA
fYear
2007
fDate
24-27 June 2007
Firstpage
1
Lastpage
3
Abstract
A method to determine porous silicon index and thickness during growth is proposed. An rms accuracy of 0.3 and 80 nm for the index and thickness, respectively was estimated based on a synthetic reflectance model including intensity and thermal noise.
Keywords
elemental semiconductors; porous semiconductors; reflectivity; refractive index measurement; silicon; thermal noise; thickness measurement; wavelength division multiplexing; CWDM-based in-situ monitoring system; intensity noise; porous silicon growth; porous silicon index; reflectance model; thermal noise; Erbium; Ice; Monitoring; Optical sensors; Silicon; Tellurium;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Internet, 2007 and the 2007 32nd Australian Conference on Optical Fibre Technology. COIN-ACOFT 2007. Joint International Conference on
Conference_Location
Melbourne, VIC
Print_ISBN
978-0-9775657-3-3
Electronic_ISBN
978-0-9775657-3-3
Type
conf
DOI
10.1109/COINACOFT.2007.4519116
Filename
4519116
Link To Document