DocumentCode
3431210
Title
Test structures for quantum efficiency characterization for silicon image sensors
Author
Odiot, F. ; Bonnouvrier, J. ; Augier, C. ; Raynor, J.M.
Author_Institution
Central R&D, ST Microelectron., Crolles, France
fYear
2003
fDate
17-20 March 2003
Firstpage
3
Lastpage
33
Abstract
To study the spectral response, test structures are specially designed. This paper presents quantum efficiency results for different kind of N-well/P-epi diodes. A comparison is made between a diode under active and under STI with or without salicidation. The impact of the design (different N-well geometries) and two reading nodes (CMOS and NMOS) are also studied. These measurements are then compared with the ISE simulation using a 2D simulation program DIOS.
Keywords
elemental semiconductors; image sensors; semiconductor device models; semiconductor device testing; silicon; DIOS; ISE simulation; N-well geometries; image sensors; quantum efficiency characterization; reading nodes; spectral response; test structures; Current measurement; Diodes; Electrons; Image sensors; Optical sensors; Photodiodes; Pixel; Power measurement; Silicon; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 2003. International Conference on
Conference_Location
Monterey, CA, USA
Print_ISBN
0-7803-7653-6
Type
conf
DOI
10.1109/ICMTS.2003.1197366
Filename
1197366
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