Title :
Process stress estimation for MEMS RF switches with capacitive test structures
Author :
Ferrario, Lorenza ; Armaroli, Cristiana ; Margesin, Benno ; Zen, Mario ; Soncini, Giovanni
Author_Institution :
Ist. per la Ricerca Sci. e Tecnologica, Trento, Italy
Abstract :
One of the basic parameters in RF capacitive switches is the actuation voltage. It strongly depends on the process stress accumulated in the switching structure, typically a suspended thin bridge, made of conductive materials. The control and the tuning of the deposition steps require the monitoring and the reduction of the process stress. We present a method to estimate the global process stress of the device taking advantage of the electrical characterization done on standard capacitive test structures integrated in the process layout.
Keywords :
microswitches; microwave switches; semiconductor device testing; semiconductor switches; MEMS RF switches; actuation voltage; capacitive test structures; conductive materials; deposition steps; electrical characterization; monitoring; process layout; process stress; process stress estimation; standard capacitive test structures; suspended thin bridge; switching structure; Bridge circuits; Mechanical factors; Micromechanical devices; Radio frequency; Stress; Substrates; Switches; Telecommunication switching; Testing; Voltage;
Conference_Titel :
Microelectronic Test Structures, 2003. International Conference on
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-7653-6
DOI :
10.1109/ICMTS.2003.1197369