Title :
CMOS performance and density trends as we approach 0.1 μm
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
The technology development required to sustain the CMOS performance and density trends near and beyond 0.1 μm is examined. It is concluded that we are fast approaching the limits of scaling conventional (bulk) CMOS. We need to look beyond scaling bulk CMOS in order to sustain the rate of CMOS performance improvement
Keywords :
CMOS integrated circuits; 0.1 mum; CMOS performance; conventional bulk CMOS; density trends; scaling; Acceleration; Application software; CMOS logic circuits; CMOS technology; Integrated circuit technology; Lithography; Manufacturing; Power dissipation; Silicon; System performance;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785768
