Title :
Analysis and characterization of device variations in an LSI chip using an integrated device matrix array
Author :
Ohkawa, Shin-Ichi ; Aoki, Masakazu ; Masuda, Hiroo
Author_Institution :
Semicond. Technol. Acad. Res. Center, Yokohama, Japan
Abstract :
For future LSI design technology, the device matrix array (DMA), which can precisely evaluate variation in device parameters within a die, has been developed. The DMA consists of a 14-by-14 array of common units. The unit size is 240 by 240 μm, and each unit contains 148 measurement elements (52 transistors, 30 capacitors, 51 resistors, and 15 ring oscillators).
Keywords :
capacitance; integrated circuit measurement; integrated circuit noise; large scale integration; 240 micron; DMA; LSI chip; device parameters; device variations; integrated device matrix array; measurement elements; ring oscillators; Electrical resistance measurement; Integrated circuit interconnections; Large scale integration; MOSFETs; Resistors; Semiconductor device measurement; Spatial resolution; Testing; Thermal resistance; Voltage;
Conference_Titel :
Microelectronic Test Structures, 2003. International Conference on
Print_ISBN :
0-7803-7653-6
DOI :
10.1109/ICMTS.2003.1197386
