Title :
Physical properties of semiconducting transition metal silicides and their prospects in Si-based device applications
Author_Institution :
Dept. of Photovoltaics, Hahn-Meitner-Inst., Berlin, Germany
Abstract :
Semiconducting transition metal silicides are of interest as potential candidates for new Si-based devices. The recent advances obtained on the understanding of the physical properties of this group of materials are summarized with special emphasis on β-FeSi2 . Characteristic features of the electronic structure are outlined. Interband and infrared optical properties are in good agreement with theoretical predictions. Light emission could be observed from implanted β-FeSi2 layers only. Incorporation of corresponding dopants gives n- and p-type material. Carrier interaction with nonpolar optical and acoustic phonons as well as neutral impurities has to be taken into account. The problems and prospects of application of semiconducting silicides are discussed
Keywords :
Hall mobility; band structure; electron-phonon interactions; impurity scattering; infrared spectra; ion implantation; semiconductor materials; thermoelectric power; transition metal compounds; β-FeSi2; FeSi2; acoustic phonons; electronic structure; implanted layers; infrared optical properties; interband optical properties; neutral impurity scattering; optical phonons; semiconducting transition metal silicides; Acoustic emission; Bonding; Iron; Optical materials; Phonons; Photovoltaic cells; Semiconductivity; Semiconductor materials; Silicides; Stimulated emission;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785866