Title :
Evidence of failure at high temperatures by metal penetration in Al 0.3Ga0.22In0.48P/GaAs HBTs
Author :
Shu, W.M. ; Gu, W.D. ; Wu, J. ; Xia, G.Q. ; Houston, P.A.
Author_Institution :
Inst. of Metall., Acad. Sinica, Shanghai, China
Abstract :
AlxGa0.52-xIn0.48P/GaAs HBTs have both high gain and excellent temperature stability due to the large valence bandgap. In this paper, the transfer characteristics of an Al 0.3Ga0.22In0.48P/GaAs HBT device are measured at 673 K to show good performance at the beginning but degrade rapidly until it fails unrecoverably. Measurements of the emitter-base diode and base-collector diode characteristics show that the collector junction fails prior to the emitter junction. The reason lies in the metal penetration of the base ohmic contact through the thin base, which is proved by the secondary ion mass spectroscopy
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; heterojunction bipolar transistors; high-temperature electronics; indium compounds; ohmic contacts; secondary ion mass spectra; 673 K; Al0.3Ga0.22In0.48P-GaAs; Al0.3Ga0.22In0.48P/GaAs HBT; gain; high temperature failure; metal penetration; ohmic contact; secondary ion mass spectroscopy; temperature stability; transfer characteristics; valence bandgap; Artificial intelligence; Doping; Epitaxial growth; Gallium arsenide; Gold; Heterojunction bipolar transistors; Ohmic contacts; Semiconductor diodes; Temperature measurement; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785961
