Title :
High throughput UHV/CVD SiGe and SiGe:C process for SiGe HBT and strained Si FET
Author :
Chen, P.S. ; Tseng, Y.T. ; Tsai, M.J. ; Liu, C.W.
Author_Institution :
Electron. Res. & Service Organ., Ind. Technol. Res. Inst., Hsinchu, Taiwan
Abstract :
A high throughput SiGe UHV/CVD system is demonstrated. Due to the excellent uniformity of thickness and Ge concentration in within a wafer, wafer to wafer, and run-to-run, this system is suitable for manufacture with the throughput of 14 200-mm wafers per hour for the typical HBT structure. The UHV/CVD can fabricate low temperature Si, strained Si1-xGex, strained Si1-xGex :C, Si1-yCy, and relaxed SiGe buffers. Various devices with good performance are fabricated by the UHV/CVD system, including HBTs, heterojunction phototransistor, strained Si MOSFET, photodetectors, quantum dot photodetectors with 6-9 μm responsivity, and strained SiGe MOSFET.
Keywords :
Ge-Si alloys; MOSFET; carbon; chemical vapour deposition; heterojunction bipolar transistors; photodetectors; phototransistors; semiconductor device manufacture; semiconductor materials; 14 to 200 mm; 6 to 9 micron; Ge concentration; SiGe; SiGe HBT; SiGe:C; UHV/CVD SiGe; heterojunction phototransistor; photodetectors; quantum dot photodetectors; strained Si FET; strained Si MOSFET; FETs; Germanium silicon alloys; Heterojunction bipolar transistors; MOSFET circuits; Manufacturing; Photodetectors; Phototransistors; Silicon germanium; Temperature; Throughput;
Conference_Titel :
Semiconductor Manufacturing Technology Workshop, 2002
Print_ISBN :
0-7803-7604-8
DOI :
10.1109/SMTW.2002.1197395
