DocumentCode :
3431835
Title :
Control of arcing problem in the passivation HDP deposition process solution
Author :
Lin, Chun-Sheng ; Huang, Jun-Jie ; Lo, Chi-Shen ; Chuang, Long-Siang
Author_Institution :
Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan
fYear :
2002
fDate :
10-11 Dec. 2002
Firstpage :
161
Lastpage :
164
Abstract :
Arcing defect was found after passivation HDP film deposition. According to arcing defect cross-section analysis, passivation arcing occurrence shows a strong correlation with the metal exposed on the wafer. Metal exposed likes an electrode which will attract plasma to discharge on this position and caused arcing problem. Therefore, there are two approaches to suppress passivation arcing occurrence. One is to avoid metal exposed as an electrode and the other is to avoid unstable plasma discharged on wafer. New unbias liner oxide recipe was implemented to solve passivation arcing problem. It is proposed to increase the unbias liner oxide thickness under zero bias setting and to add additional buffer step for bias power ramp up step after the unbias liner oxide deposition. The thicker unbias liner oxide thickness can be isolated from exposed metal to contact with HDP high energy plasma directly, so the plasma will not be discharged on that position. And an additional buffer step for the bias power ramp up step can avoid the bias power overshot. This can prevent the unstable plasma being discharged on the wafer. According to our experiment and tracing results, the new unbias liner recipe is very effective to suppress passivation arcing occurrence and without other side effect.
Keywords :
arcs (electric); integrated circuit technology; passivation; plasma deposition; process control; wafer bonding; HDP film deposition; arcing defect cross section analysis; high density plasma; passivation; passivation arcing; plasma discharge; power ramp; unbias liner oxide recipe; wafer; zero bias setting; Electrodes; Manufacturing industries; Optical films; Optical microscopy; Passivation; Plasmas; Scanning electron microscopy; Seals; Semiconductor device manufacture; Semiconductor films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing Technology Workshop, 2002
Print_ISBN :
0-7803-7604-8
Type :
conf
DOI :
10.1109/SMTW.2002.1197399
Filename :
1197399
Link To Document :
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