• DocumentCode
    3431835
  • Title

    Control of arcing problem in the passivation HDP deposition process solution

  • Author

    Lin, Chun-Sheng ; Huang, Jun-Jie ; Lo, Chi-Shen ; Chuang, Long-Siang

  • Author_Institution
    Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan
  • fYear
    2002
  • fDate
    10-11 Dec. 2002
  • Firstpage
    161
  • Lastpage
    164
  • Abstract
    Arcing defect was found after passivation HDP film deposition. According to arcing defect cross-section analysis, passivation arcing occurrence shows a strong correlation with the metal exposed on the wafer. Metal exposed likes an electrode which will attract plasma to discharge on this position and caused arcing problem. Therefore, there are two approaches to suppress passivation arcing occurrence. One is to avoid metal exposed as an electrode and the other is to avoid unstable plasma discharged on wafer. New unbias liner oxide recipe was implemented to solve passivation arcing problem. It is proposed to increase the unbias liner oxide thickness under zero bias setting and to add additional buffer step for bias power ramp up step after the unbias liner oxide deposition. The thicker unbias liner oxide thickness can be isolated from exposed metal to contact with HDP high energy plasma directly, so the plasma will not be discharged on that position. And an additional buffer step for the bias power ramp up step can avoid the bias power overshot. This can prevent the unstable plasma being discharged on the wafer. According to our experiment and tracing results, the new unbias liner recipe is very effective to suppress passivation arcing occurrence and without other side effect.
  • Keywords
    arcs (electric); integrated circuit technology; passivation; plasma deposition; process control; wafer bonding; HDP film deposition; arcing defect cross section analysis; high density plasma; passivation; passivation arcing; plasma discharge; power ramp; unbias liner oxide recipe; wafer; zero bias setting; Electrodes; Manufacturing industries; Optical films; Optical microscopy; Passivation; Plasmas; Scanning electron microscopy; Seals; Semiconductor device manufacture; Semiconductor films;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing Technology Workshop, 2002
  • Print_ISBN
    0-7803-7604-8
  • Type

    conf

  • DOI
    10.1109/SMTW.2002.1197399
  • Filename
    1197399