Title :
An investigation of plasma damage associated with micro metal contamination resulted in junction leakage of high voltage LCD driver device
Author :
Wang, C.Y. ; Lin, T.S. ; Jou, C.S. ; Chung, C.P. ; Chou, C.N. ; Lin, W.T.
Author_Institution :
Mosel Vitelic Inc., Hsinchu, Taiwan
Abstract :
The mechanism of the junction leakage of high voltage device (15 V operation voltage) caused by plasma damage was investigated in the present study. The failure analysis shows that this junction leakage is occurred at NMOS device. From delayer and KOH decoration, it is found all the N+ active area has some micro pits. In this study, we propose a failure mechanism to explain this phenomena: plasma-induced damage will leave some Al (aluminum) contaminations on silicon wafer surface, which will form silicon defects located under substrate after high energy As (arsenic) I/I process due to the high reactivity between Al and As. This failure mechanism with additional As implant also serves a good tool to physical inspection of Al like contaminations.
Keywords :
MOS integrated circuits; aluminium; arsenic; contamination; driver circuits; liquid crystal displays; plasma materials processing; silicon; 15 V; Al; As; LCD driver device; NMOS; Si; aluminum contaminations; failure mechanism; junction leakage; micrometal contamination; plasma induced damage; silicon defects; silicon wafer surface; Aluminum; Delay; Failure analysis; Implants; Inspection; MOS devices; Plasma devices; Silicon; Surface contamination; Voltage;
Conference_Titel :
Semiconductor Manufacturing Technology Workshop, 2002
Print_ISBN :
0-7803-7604-8
DOI :
10.1109/SMTW.2002.1197401
