• DocumentCode
    3432036
  • Title

    A novel method to prevent the galvanic effect by the N2 gas purging in the Ti/TiN sputter process

  • Author

    Chang, C.J. ; Lin, T.S. ; Jou, C.S. ; Wang, C.Y. ; Chung, C.P. ; Chou, C.N. ; Lin, W.T.

  • Author_Institution
    Mosel Vitelic Inc., Hsinchu, Taiwan
  • fYear
    2002
  • fDate
    10-11 Dec. 2002
  • Firstpage
    191
  • Lastpage
    192
  • Abstract
    Ti/TiN film is usually sputtered on the AlCu surface as anti-reflection layer. In our case, we find that weaker TiN is formed because of the temperature difference between Ti/TiN and AlCu surfaces during subsequent sputtering process. The coming out surface stress by the temperature difference induces weaker TiN in some specified topography and generates the galvanic effect after processing in subsequent developer solution (alkaline-like). In order to avoid the surface stress, cooling down the surface temperature of AlCu before depositing the Ti/TiN layers with the N2 gas purging is found to be an effective way for the suppression of galvanic phenomena.
  • Keywords
    galvanising; internal stresses; nitrogen; sputtered coatings; surface topography; thin films; titanium; titanium compounds; AlCu; AlCu surface; N2; N2 gas; Ti-TiN; Ti/TiN film; Ti/TiN sputter process; antireflection layer; cooling; developer solution; galvanic effect; purging; surface stress; surface temperature; Argon; Cooling; Galvanizing; Inspection; Protection; Sputtering; Stress; Surface topography; Temperature; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing Technology Workshop, 2002
  • Print_ISBN
    0-7803-7604-8
  • Type

    conf

  • DOI
    10.1109/SMTW.2002.1197411
  • Filename
    1197411
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3432036