Title :
A novel method to prevent the galvanic effect by the N2 gas purging in the Ti/TiN sputter process
Author :
Chang, C.J. ; Lin, T.S. ; Jou, C.S. ; Wang, C.Y. ; Chung, C.P. ; Chou, C.N. ; Lin, W.T.
Author_Institution :
Mosel Vitelic Inc., Hsinchu, Taiwan
Abstract :
Ti/TiN film is usually sputtered on the AlCu surface as anti-reflection layer. In our case, we find that weaker TiN is formed because of the temperature difference between Ti/TiN and AlCu surfaces during subsequent sputtering process. The coming out surface stress by the temperature difference induces weaker TiN in some specified topography and generates the galvanic effect after processing in subsequent developer solution (alkaline-like). In order to avoid the surface stress, cooling down the surface temperature of AlCu before depositing the Ti/TiN layers with the N2 gas purging is found to be an effective way for the suppression of galvanic phenomena.
Keywords :
galvanising; internal stresses; nitrogen; sputtered coatings; surface topography; thin films; titanium; titanium compounds; AlCu; AlCu surface; N2; N2 gas; Ti-TiN; Ti/TiN film; Ti/TiN sputter process; antireflection layer; cooling; developer solution; galvanic effect; purging; surface stress; surface temperature; Argon; Cooling; Galvanizing; Inspection; Protection; Sputtering; Stress; Surface topography; Temperature; Tin;
Conference_Titel :
Semiconductor Manufacturing Technology Workshop, 2002
Print_ISBN :
0-7803-7604-8
DOI :
10.1109/SMTW.2002.1197411
