Title :
Simulation of the high frequency performances of a new type of SiGe HBT and fabrication
Author :
Zhao, Lixin ; Shen, Guangdi ; Chen, Jianxin ; Gao, Guo ; Zou, Deshu ; Xu, Chen ; Du, Jinyu
Author_Institution :
Dept. of Electron. Eng., Beijing Polytech. Univ., China
Abstract :
In this paper, a new type of SiGe HBT with modulation doped quantum well base structures has been presented for the first time. It is of both higher cut off frequency fT and maximum oscillation frequency fmax than the current SiGe HBTs. Its high frequency performances have been analyzed and simulated from the physical model, including the influence of the following factors. They are (1) the carrier transport in the undoped quantum well, (2) the parasitic parameters of quantum well and barrier and (3) the carrier transport time from the emitter to collector, as the base width is several hundred angstroms. The results of simulation are in good agreement with those of experimental tests
Keywords :
Ge-Si alloys; carrier mobility; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; semiconductor quantum wells; HBT; SiGe; cut off frequency; emitter-collector transit time; high frequency performance; maximum oscillation frequency; modulation doped quantum well; parasitic parameters; Bipolar transistors; Doping; Epitaxial layers; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Laboratories; Optical device fabrication; Sheet materials; Silicon germanium;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.786134
