Improved 0.25 μm salicide yield via amorphous poly process optimizing

Author

Hsu, Pai Kang ; Shveh, Ya Jen ; Kuo, Ding Wen ; Ku, Shao Yen ; You, Y.J.

Author_Institution

Taiwan Semicond. Manuf. Co. Ltd., Hsin-Chu, Taiwan

fYear

2002

fDate

10-11 Dec. 2002

Firstpage

195

Lastpage

197

Abstract

The influence of process was investigated on A-Si poly bump in this research, especially the density of poly bump was also studied to realize its characterization. This study showed that oxygen concentration has strong correlation with the bump density. In other word, the bump density increases as oxygen concentration increase. In order to reduce O₂ concentration, the following approach is described to verify it: 1) deposition pressure, 2) loading and unloading temperature, 3) loading area O₂ concentration - lower O2 concentration on loading area would get lowly bumps. In conclusion, the CP yield gained about 13% on Saliside product on well control a-poly process condition.

Keywords

amorphous semiconductors; elemental semiconductors; grain size; semiconductor device manufacture; silicon; surface roughness; 0.25 micron; CP yields; Si; Si poly bump; amorphous poly process optimizing; amorphous silicon deposition; bump density; deposition pressure; oxygen concentration; salicide product; unloading temperature; Amorphous materials; Atomic force microscopy; Dry etching; Electromagnetic scattering; Particle scattering; Response surface methodology; Rough surfaces; Scanning electron microscopy; Surface roughness; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing Technology Workshop, 2002

Print_ISBN

0-7803-7604-8

Type

conf

DOI

10.1109/SMTW.2002.1197413

Filename

1197413