Title :
Improved 0.25 μm salicide yield via amorphous poly process optimizing
Author :
Hsu, Pai Kang ; Shveh, Ya Jen ; Kuo, Ding Wen ; Ku, Shao Yen ; You, Y.J.
Author_Institution :
Taiwan Semicond. Manuf. Co. Ltd., Hsin-Chu, Taiwan
Abstract :
The influence of process was investigated on A-Si poly bump in this research, especially the density of poly bump was also studied to realize its characterization. This study showed that oxygen concentration has strong correlation with the bump density. In other word, the bump density increases as oxygen concentration increase. In order to reduce O2 concentration, the following approach is described to verify it: 1) deposition pressure, 2) loading and unloading temperature, 3) loading area O2 concentration - lower O2 concentration on loading area would get lowly bumps. In conclusion, the CP yield gained about 13% on Saliside product on well control a-poly process condition.
Keywords :
amorphous semiconductors; elemental semiconductors; grain size; semiconductor device manufacture; silicon; surface roughness; 0.25 micron; CP yields; Si; Si poly bump; amorphous poly process optimizing; amorphous silicon deposition; bump density; deposition pressure; oxygen concentration; salicide product; unloading temperature; Amorphous materials; Atomic force microscopy; Dry etching; Electromagnetic scattering; Particle scattering; Response surface methodology; Rough surfaces; Scanning electron microscopy; Surface roughness; Temperature;
Conference_Titel :
Semiconductor Manufacturing Technology Workshop, 2002
Print_ISBN :
0-7803-7604-8
DOI :
10.1109/SMTW.2002.1197413
