Title :
Dielectric hard mask etching with ArF photo resist
Author_Institution :
LAM Res. Corp., Hsinchu, Taiwan
Abstract :
The ArF photo resists are rapidly progressing just in time for the 0.1 μm device generation and beyond. There is a complex interaction between the lithographic performance and plasma etching process. This study develop a plasma etching process to etch dielectric hard mask with a commercial ArF resist and address the issue of limited etching resistance of the ArF resist.
Keywords :
dielectric materials; lithography; masks; photoresists; semiconductor device manufacture; sputter etching; ArF photo resists; device generation; dielectric hard mask etching; etching resistance; lithographic process; plasma bias power; plasma etching; semiconductor manufacture; sidewall striations; Dielectrics; Etching; Plasma applications; Plasma chemistry; Plasma density; Plasma devices; Plasma materials processing; Plasma sources; Plasma waves; Resists;
Conference_Titel :
Semiconductor Manufacturing Technology Workshop, 2002
Print_ISBN :
0-7803-7604-8
DOI :
10.1109/SMTW.2002.1197415
