DocumentCode
3432122
Title
Contamination control in 300 mm foundry
Author
Hsu, Hsien-Jung ; Chen, I-Chun ; Jann, Lany
Author_Institution
Taiwan Semicond. Manuf. Co., Ltd., Hsin-Chu, Taiwan
fYear
2002
fDate
10-11 Dec. 2002
Firstpage
212
Lastpage
214
Abstract
In the normal wafer process flow, the contamination problem must not happen except a little of RD research lots. In 300 mm fab, we put multiple lots in a carrier to improve the operation efficiency. This feature reduces the cost but increase the risk of contamination disaster very much. A lot coated with the photo resist must be prevented from entering a furnace. The mixed frond-end and back-end processed lots could have contamination issue after study. New research material, like copper, will affect the yield if they are not separated with aluminum. All of them are the scope of the contamination control.
Keywords
aluminium; contamination; copper; foundries; photoresists; process control; semiconductor device manufacture; Al; Cu; aluminum; back end processed lots; contamination control; contamination disaster; copper; foundry; frond end processed lots; photo resist; wafer process flow; Aluminum; Conducting materials; Contamination; Foundries; Furnaces; Manufacturing industries; Manufacturing processes; Resists; Semiconductor device manufacture; Semiconductor materials;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing Technology Workshop, 2002
Print_ISBN
0-7803-7604-8
Type
conf
DOI
10.1109/SMTW.2002.1197417
Filename
1197417
Link To Document