Synthesis of SiC using ion beam and PECVD

SiC films were synthesized by ion implantation, ion beam enhanced deposition, reactive ion beam sputtering and plasma enhanced chemical vapor deposition (PECVD). P-type (100) Si was implanted with 60 keV C ⁺ at different temperatures to form a SiC buried layer. Implanting at 680°C, there are two apparent XRD peaks due to the β-SiC(200) and (400) reflections in as implanted samples. Ion beam enhanced deposition could be adopt to prepare amorphous SiC films containing SiC bonds whose absorption bands located at 800 cm^-1 . Hydrogenated amorphous SiC films were synthesized by reactive ion beam sputtering deposition. Meanwhile, hydrogenate amorphous SiC film which can exhibit green photoluminescence at room temperature were prepared by PECVD