Application of the TRM self-calibration on standard silicon substrates

Author

Gillon, Renaud ; Tatinian, William ; Landat, Benoît

Author_Institution

AMI Semicond. bvba, Oudenaarde, Belgium

fYear

2003

fDate

17-20 March 2003

Firstpage

109

Lastpage

112

Abstract

This paper reports the application of the: TRM self-calibration technique for the de-embedding of on-wafer measurements on bulk-silicon substrates, for the first time. Two major issues that historically prevented this, have been identified and solved. The new procedure is duly validated by comparison with the already established in-situ TRL calibration. It remedies the bandwidth limitation of TRL, still keeping the flexibility for moving reference planes.

Keywords

S-parameters; calibration; integrated circuit measurement; Si; TRM self-calibration; bandwidth limitation; on-wafer measurements; reference planes; Ambient intelligence; Bandwidth; Calibration; Dielectric substrates; Frequency; Resistors; Scattering parameters; Silicon; Time measurement; Transmission line measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2003. International Conference on

Print_ISBN

0-7803-7653-6

Type

conf

DOI

10.1109/ICMTS.2003.1197425

Filename

1197425

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3432244