Broadband SiGe HBT Amplifier Concepts for 40 Gbit/s Fibre-Optic Communication Systems

Author

Schick, C. ; Feger, T. ; Sönmez, E. ; Schad, K.-B. ; Trasser, A. ; Schumacher, H.

Author_Institution

Dept. of Electron Devices & Circuits, Ulm Univ.

Volume

1

fYear

2005

fDate

4-6 Oct. 2005

Firstpage

113

Lastpage

116

Abstract

Distributed single-ended, distributed differential and lumped differential circuit concepts for realisation of linear broadband amplifiers are presented. Concept advantages and disadvantages are discussed. Demonstration circuits of the first two kinds have been fabricated, the third one being currently in fabrication. All three circuits utilise the same SiGe HBT technology. The amplifiers´ 3dB cut-off frequencies range from 32 GHz to 41 GHz. They are intended for use in 40 Gbit/s optical communication systems

Keywords

Ge-Si alloys; bipolar transistor circuits; differential amplifiers; distributed amplifiers; lumped parameter networks; optical fibre communication; wideband amplifiers; 32 to 41 GHz; 40 Gbit/s; SiGe; broadband HBT amplifier; distributed differential circuit; distributed single-ended differential circuit; fibre-optic communication systems; linear broadband amplifiers; lumped differential circuit; Broadband amplifiers; Circuits; Cutoff frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Optical amplifiers; Optical device fabrication; Optical fiber amplifiers; Optical fiber communication; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2005 European

Conference_Location

Paris

Print_ISBN

2-9600551-2-8

Type

conf

DOI

10.1109/EUMC.2005.1608806

Filename

1608806