BSIM3 RF models for MOS transistors: a novel technique for substrate network extraction

This paper presents a novel technique for extraction of substrate network and other extrinsic elements of the RF model for the MOS transistors. RF measurements in the common-gate configuration of the MOS transistors are used for the extraction of the substrate network. The values of the extracted substrate network elements are found to consistently scale with number of fingers. The measured large signal behavior (P_in-P_out characteristics) compare very well with the one modeled by the extracted parameters.