DocumentCode
3432356
Title
A new technique to extract intrinsic and extrinsic base-collector capacitances of bipolar transistors using Y-parameter equations
Author
Lee, Seonghearn
Author_Institution
Dept. of Electron. Eng., Hankuk Univ. of Foreign Studies, Yongin, South Korea
fYear
2003
fDate
17-20 March 2003
Firstpage
133
Lastpage
136
Abstract
A new method utilizing the frequency-response of Y-parameter equations is developed to extract intrinsic and extrinsic base-collector capacitances of bipolar junction transistors independently, without any extraction of the base resistance and total base-collector capacitance. The sum of extracted intrinsic and extrinsic base-collector capacitances agrees well with the total base-collector capacitance obtained from the conventional method, verifying the accuracy of the new one.
Keywords
bipolar transistors; capacitance; frequency response; Y-parameter equations; base-collector capacitances; bipolar transistors; frequency-response; Area measurement; Bipolar transistors; Capacitance; Electrical resistance measurement; Equations; Equivalent circuits; Integrated circuit modeling; Radio frequency; Radiofrequency integrated circuits; Scattering parameters;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 2003. International Conference on
Print_ISBN
0-7803-7653-6
Type
conf
DOI
10.1109/ICMTS.2003.1197431
Filename
1197431
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