Title :
Schottky contact between metal and two-dimensional electron gas: device applications to low-noise optical detectors
Author :
Castro, Fancisco ; Anwar, Amro ; Naber, B.
Author_Institution :
Dept. of Electr. & Comput. Eng., Drexel Univ., Philadelphia, PA, USA
Abstract :
The current-voltage behaviour of a modified metal-semiconductor-metal (MSM) structure based on direct contact to an AlGaAs-GaAs heterojunction is presented. An analytical description of Schottky contact between metal and the two-dimensional electron gas (2-DEG) and its effects on current transport are investigated to better understand device operation. Thermionic emission calculations lead to a barrier enhancement factor of exp(-E0/kBT). The new device demonstrates reduction in dark current as well as higher responsivity and lower reach-through voltage
Keywords :
III-V semiconductors; Schottky barriers; aluminium compounds; gallium arsenide; metal-semiconductor-metal structures; photodetectors; semiconductor-metal boundaries; thermionic emission; two-dimensional electron gas; 2DEG; AlGaAs-GaAs; AlGaAs-GaAs heterojunction; Schottky contact; barrier enhancement factor; current transport; current-voltage behaviour; dark current reduction; device applications; direct contact; low-noise optical detectors; metal-semiconductor-metal structure; modified MSM structure; reach-through voltage; responsivity; thermionic emission calculations; two-dimensional electron gas; Application software; Dark current; Electrons; Gallium arsenide; Optical noise; Optical receivers; Photodetectors; Schottky barriers; Thermionic emission; Voltage;
Conference_Titel :
Microwave and Optoelectronics Conference, 1997. Linking to the Next Century. Proceedings., 1997 SBMO/IEEE MTT-S International
Conference_Location :
Natal
Print_ISBN :
0-7803-4165-1
DOI :
10.1109/SBMOMO.1997.646869
