Title :
Test structure design considerations for RF-CV measurements on leaky dielectrics
Author :
Schmitz, J. ; Cubaynes, F.N. ; Havens, R.J. ; de Kort, R. ; Scholten, A.J. ; Tiemeijer, L.F.
Author_Institution :
Philips Res. Leuven, Belgium
Abstract :
We present a MOS capacitance-voltage measurement methodology that, contrary to present methods, is highly robust against gate leakage current densities up to 1000 A/cm2. The methodology features specially designed RF test structures and RF measurement frequencies. It allows MOS parameter extraction in the full range of accumulation, depletion and inversion.
Keywords :
CMOS integrated circuits; capacitance; dielectric thin films; integrated circuit design; integrated circuit testing; leakage currents; radiofrequency integrated circuits; CMOS device dimensions scaling; MOS capacitance-voltage measurement methodology; MOS parameter extraction accumulation; RF measurement frequencies; RF test structures; RF-CV measurements; accumulation; depletion; gate leakage current density robustness; inversion; leaky dielectrics; test methods; test structure design; Capacitance measurement; Capacitance-voltage characteristics; Current measurement; Density measurement; Design methodology; Dielectric measurements; Leakage current; Radio frequency; Robustness; Testing;
Conference_Titel :
Microelectronic Test Structures, 2003. International Conference on
Print_ISBN :
0-7803-7653-6
DOI :
10.1109/ICMTS.2003.1197458
