A Quasi-Two-Dimensional Threshold Voltage Model for Fully Depleted SOI LDMOS

Author

Wu Xiu-long ; Chen Jun-ning ; Ke Dao-Ming

Author_Institution

Inst. of Electron. Sci. & Technol., Anhui Univ., Hefei

fYear

2008

fDate

12-14 Oct. 2008

Firstpage

1

Lastpage

3

Abstract

The potential distribution for the channel depletion layer of fully depleted SOI LDMOS was obtained by using quasi- two-dimensional approach, and an analytical threshold voltage model was established. The accuracy of the model is verified by comparison with the results of 2-D semiconductor device simulator MEDICI. From this model, we can find how the channel length, channel doping concentration, the thickness of silicon film and gate oxide influences the threshold voltage. Otherwise, the variation of threshold voltage is independent on back-gate bias.

Keywords

MOSFET; semiconductor device models; silicon-on-insulator; LDMOS; analytical threshold voltage model; back-gate bias; gate oxide; quasitwo-dimensional threshold voltage model; silicon film; silicon-on-insulator; Analytical models; Doping; Gaussian channels; MOSFET circuits; Poisson equations; Semiconductor films; Semiconductor process modeling; Silicon on insulator technology; Surface fitting; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Communications, Networking and Mobile Computing, 2008. WiCOM '08. 4th International Conference on

Conference_Location

Dalian

Print_ISBN

978-1-4244-2107-7

Electronic_ISBN

978-1-4244-2108-4

Type

conf

DOI

10.1109/WiCom.2008.460

Filename

4678369