Title :
A Quasi-Two-Dimensional Threshold Voltage Model for Fully Depleted SOI LDMOS
Author :
Wu Xiu-long ; Chen Jun-ning ; Ke Dao-Ming
Author_Institution :
Inst. of Electron. Sci. & Technol., Anhui Univ., Hefei
Abstract :
The potential distribution for the channel depletion layer of fully depleted SOI LDMOS was obtained by using quasi- two-dimensional approach, and an analytical threshold voltage model was established. The accuracy of the model is verified by comparison with the results of 2-D semiconductor device simulator MEDICI. From this model, we can find how the channel length, channel doping concentration, the thickness of silicon film and gate oxide influences the threshold voltage. Otherwise, the variation of threshold voltage is independent on back-gate bias.
Keywords :
MOSFET; semiconductor device models; silicon-on-insulator; LDMOS; analytical threshold voltage model; back-gate bias; gate oxide; quasitwo-dimensional threshold voltage model; silicon film; silicon-on-insulator; Analytical models; Doping; Gaussian channels; MOSFET circuits; Poisson equations; Semiconductor films; Semiconductor process modeling; Silicon on insulator technology; Surface fitting; Threshold voltage;
Conference_Titel :
Wireless Communications, Networking and Mobile Computing, 2008. WiCOM '08. 4th International Conference on
Conference_Location :
Dalian
Print_ISBN :
978-1-4244-2107-7
Electronic_ISBN :
978-1-4244-2108-4
DOI :
10.1109/WiCom.2008.460
