Title :
Ultra Low Voltage Operation with Bootstrap Scheme for Single Power Supply SOI-SRAM
Author :
Iijima, Masaaki ; Kitamura, Masayuki ; Numa, Masahiro ; Tada, Akira ; Ipposhi, Takashi
Author_Institution :
Kobe Univ.
Abstract :
This paper presents an SOI-SRAM design employing a bootstrap scheme for ultra low voltage operation. The active body-biasing control (ABC) with PD-SOI is a key idea to enhance the boosting effect owing to a strong capacitive coupling. Our ABC-bootstrap scheme enables boosting the word line (WL) voltage higher than the supply voltage in short transition time without dual power supply rails. Simulation results have shown improvement in both the access time and operation at ultra low supply voltage less than 0.5V
Keywords :
SRAM chips; bootstrap circuits; low-power electronics; silicon-on-insulator; SRAM chips; active body-biasing control; bootstrap scheme; capacitive coupling; silicon-on-insulator; Boosting; Dynamic voltage scaling; Energy consumption; Frequency; Low voltage; Power supplies; Rails; Random access memory; Threshold voltage; Voltage control;
Conference_Titel :
VLSI Design, 2007. Held jointly with 6th International Conference on Embedded Systems., 20th International Conference on
Conference_Location :
Bangalore
Print_ISBN :
0-7695-2762-0
DOI :
10.1109/VLSID.2007.175
