Analysis of Si-body thickness variation for a new 40 nm gate length bFDSOI

Author

Lin, Jyi-Tsong ; Eng, Yi-Chuen ; Lee, Tai-Yi ; Lin, Kao-Cheng

Author_Institution

Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Seoul

fYear

2007

fDate

6-10 Jan. 2007

Firstpage

653

Lastpage

656

Abstract

In this work, a novel fully depleted silicon-on- insulator MOSFET with block oxide (bFDSOI) is proposed to investigate the influence of Si-body thickness on the characteristics of the device. Based on the two-dimensional (2-D) simulation results, the proposed structure exhibits better ultra-short-channel behavior such as reduced drain-induced barrier lowering (DIBL) and better subthreshold swing when compared with that of a conventional ultra-thin body (UTB) SOI structure. Furthermore, thanks to the presence of thick Si-body, the bFDSOI FET also shows reduced thermal effects that can help to improve the device reliability.

Keywords

MOSFET; semiconductor device models; semiconductor device reliability; silicon-on-insulator; Si-SiO₂; block oxide; device reliability; drain-induced barrier lowering; fully-depleted silicon-on-insulator MOSFET; subthreshold swing; thermal effects; thick silicon-body thickness variation; two-dimensional simulation; ultra-short-channel behavior; Electron beams; Etching; FETs; Lithography; MOSFET circuits; Scanning electron microscopy; Silicon; Sun; Thermal resistance; Two dimensional displays;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Design, 2007. Held jointly with 6th International Conference on Embedded Systems., 20th International Conference on

Conference_Location

Bangalore

ISSN

1063-9667

Print_ISBN

0-7695-2762-0

Type

conf

DOI

10.1109/VLSID.2007.37

Filename

4092116