Title :
Analysis of radiation-induced leakage in MOS-SOS edge parasitic transistors using a 3-D device simulator
Author :
Rios, Rafael ; Smeltzer, Ronald K. ; Amantea, Robert ; Rothwarf, Allen
Author_Institution :
David Sarnoff Res. Center, Princeton, NJ, USA
Abstract :
The role of the edge parasitic transistor in the MOS-SOS (silicon-on-sapphire) device behavior is analyzed with a new 3-D device simulator. Radiation effects on the n-MOS device leakage are simulated by adding positive charge distributions at the back interface. It is shown that the radiation-induced leakage is very sensitive to the back interface charge density, which explains the large variations observed in practice. The 3-D simulations also demonstrate that the bottom corner of the edge transistor is the region where most of the radiation-induced leakage current flows
Keywords :
insulated gate field effect transistors; interface electron states; leakage currents; radiation effects; semiconductor device models; semiconductor-insulator boundaries; 3-D device simulator; MOS-SOS edge parasitic transistors; Si-Al2O3; back interface charge density; positive charge distributions; radiation-induced leakage; Analytical models; Calibration; Current density; Degradation; Electrons; Leakage current; Radiation effects; Silicon; Smelting; Threshold voltage;
Conference_Titel :
SOS/SOI Technology Conference, 1990., 1990 IEEE
Conference_Location :
Key West, FL
Print_ISBN :
0-87942-573-3
DOI :
10.1109/SOSSOI.1990.145693
