Title :
Voltage adjustable attenuation with low 1/f noise
Author :
Ferre-Pikal, ES ; Walls, F.L.
Author_Institution :
Nat. Inst. of Stand. & Technol., Boulder, CO, USA
Abstract :
In this paper we describe voltage-controlled attenuator circuits using silicon p-n diodes as the variable resistor. We report the amplitude modulation (AM) and phase modulation (PM) noise sensitivities to power supply noise and to current noise. We also report the PM noise of these circuits as a function of the dc control voltage
Keywords :
1/f noise; amplitude modulation; attenuators; circuit noise; electric noise measurement; elemental semiconductors; phase modulation; phase noise; phase shifters; semiconductor diodes; silicon; 1/f noise; PM noise; Si; Si p-n diodes; amplitude modulation; dc control voltage; noise sensitivities; phase modulation; power supply; variable resistor; voltage-controlled attenuator circuits; Amplitude modulation; Attenuation; Attenuators; Circuit noise; Diodes; Noise level; Phase noise; Resistors; Silicon; Voltage;
Conference_Titel :
Frequency Control Symposium, 1998. Proceedings of the 1998 IEEE International
Conference_Location :
Pasadena, CA
Print_ISBN :
0-7803-4373-5
DOI :
10.1109/FREQ.1998.717903
