DocumentCode
3433750
Title
Insulated gate triac: device operation and applications
Author
Ajit, J.S. ; Dutta, R. ; Kinzer, D.
Author_Institution
Power Integrations Inc., Sunnyvale, CA, USA
Volume
2
fYear
1998
fDate
17-22 May 1998
Firstpage
1180
Abstract
A new three-terminal power switch is described. The MOS-gated bi-directional device has forward and reverse conducting paths that utilize the same area, thus saving silicon space significantly. A single MOS-gate controls the current flow in both the forward and reverse directions. Two examples of power electronic applications that benefit from the use of this device are briefly discussed
Keywords
MOS-controlled thyristors; power convertors; power semiconductor switches; uninterruptible power supplies; MOS-gated bidirectional device; Si; current flow; device applications; device operation; forward conducting path; insulated gate triac; power electronic applications; reverse conducting path; silicon space; three-terminal power switch; Anodes; Bidirectional control; Bridge circuits; Cathodes; Insulation; MOSFETs; Rectifiers; Silicon; Thyristors; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1998. PESC 98 Record. 29th Annual IEEE
Conference_Location
Fukuoka
ISSN
0275-9306
Print_ISBN
0-7803-4489-8
Type
conf
DOI
10.1109/PESC.1998.703154
Filename
703154
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