Title :
Interface characterization in fully depleted SOI MOSFETs by dynamic transconductance
Author :
Ioannou, D.E. ; Zhong, X. ; Campisi, G.J. ; Hughes, H.L.
Author_Institution :
Electron. Comput. Eng. Dept., George Mason Univ., Fairfax, VA, USA
Abstract :
The interface characterization for very thin (fully depleted) SOI (silicon-on-insulator) layers is addressed. A new technique, dynamic transconductance, has recently been developed for bulk MOSFETs and exhibited important advantages. The technique has been successfully adapted to partially depleted and depletion mode SOI MOSFETs. A model for the application of the dynamic transconductance technique in fully depleted SOI MOSFETs is developed, and the experimental conditions are described. A demonstration of the validity of the model is given by applying the technique to study fully developed SIMOX (separation by implantation of oxygen) MOSFETs
Keywords :
insulated gate field effect transistors; interface electron states; semiconductor device models; semiconductor device testing; semiconductor-insulator boundaries; SIMOX; SOI MOSFET; Si-SiO2; dynamic transconductance; fully depleted; interface characterization; model; Capacitance measurement; Charge pumps; Current measurement; Electrical resistance measurement; Interface states; Laboratories; MOSFETs; Physics; Transconductance; Voltage;
Conference_Titel :
SOS/SOI Technology Conference, 1990., 1990 IEEE
Conference_Location :
Key West, FL
Print_ISBN :
0-87942-573-3
DOI :
10.1109/SOSSOI.1990.145700
