Interface characterization in fully depleted SOI MOSFETs by dynamic transconductance

Author

Ioannou, D.E. ; Zhong, X. ; Campisi, G.J. ; Hughes, H.L.

Author_Institution

Electron. Comput. Eng. Dept., George Mason Univ., Fairfax, VA, USA

fYear

1990

fDate

2-4 Oct 1990

Firstpage

42

Lastpage

43

Abstract

The interface characterization for very thin (fully depleted) SOI (silicon-on-insulator) layers is addressed. A new technique, dynamic transconductance, has recently been developed for bulk MOSFETs and exhibited important advantages. The technique has been successfully adapted to partially depleted and depletion mode SOI MOSFETs. A model for the application of the dynamic transconductance technique in fully depleted SOI MOSFETs is developed, and the experimental conditions are described. A demonstration of the validity of the model is given by applying the technique to study fully developed SIMOX (separation by implantation of oxygen) MOSFETs

Keywords

insulated gate field effect transistors; interface electron states; semiconductor device models; semiconductor device testing; semiconductor-insulator boundaries; SIMOX; SOI MOSFET; Si-SiO₂; dynamic transconductance; fully depleted; interface characterization; model; Capacitance measurement; Charge pumps; Current measurement; Electrical resistance measurement; Interface states; Laboratories; MOSFETs; Physics; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOS/SOI Technology Conference, 1990., 1990 IEEE

Conference_Location

Key West, FL

Print_ISBN

0-87942-573-3

Type

conf

DOI

10.1109/SOSSOI.1990.145700

Filename

145700