Title :
Two-dimensional analytical threshold voltage model for nanoscale graded channel gate stack DG MOSFETs
Author :
Abdi, M.A. ; Djeffal, F. ; Meguellati, M. ; Arar, D.
Author_Institution :
Dept. of Electron., Univ. of Laghouat, Laghouat, Algeria
Abstract :
Due to the advancement of the oxide and channel materials engineering, nanoscale graded channel gate stack (GCGAS) Double Gate (DG) MOSFET has been investigated and expected to suppress the short-channel effects and improve the subthreshold performances. So, in this paper a new two-dimensional analytical threshold voltage model is proposed to study and improve of the behavior of the nanoscale DG MOSFET in subthreshold domain for nanoelectronics applications. The developed approaches are verified and validated by the good agreement found with the numerical simulation.
Keywords :
MOSFET; nanoelectronics; semiconductor device models; double gate MOSFET; nanoelectronics; nanoscale DG MOSFET; nanoscale graded channel gate stack MOSFET; numerical simulation; short-channel effects; subthreshold domain; two-dimensional analytical threshold voltage model; Analytical models; Circuits; Doping; Gate leakage; High K dielectric materials; High-K gate dielectrics; MOSFETs; Permittivity; Silicon; Threshold voltage;
Conference_Titel :
Electronics, Circuits, and Systems, 2009. ICECS 2009. 16th IEEE International Conference on
Conference_Location :
Yasmine Hammamet
Print_ISBN :
978-1-4244-5090-9
Electronic_ISBN :
978-1-4244-5091-6
DOI :
10.1109/ICECS.2009.5410801
