DocumentCode
3433852
Title
Characterization of ferroelectric thin-film planar microwave devices using the method of line (MoL)
Author
Giraud, S. ; Courreges, S. ; Cros, D. ; Madrangeas, V.
Author_Institution
IRCOM - UMR, Limoges, France
Volume
1
fYear
2005
fDate
4-6 Oct. 2005
Abstract
The characterization of ferroelectric thin-film planar microwave devices using the method of Line (MoL) has been summarized in this paper. Because the permittivity-dc electric field dependence in ferroelectric materials is used to tune microwave devices, it is necessary to develop a suitable analysis method to accurately characterize ferroelectric materials. This paper presents first results of 2D analysis of tunable planar devices.
Keywords
circuit CAD; ferroelectric materials; method of lines; microwave devices; thin films; 2D analysis; ferroelectric materials; ferroelectric microwave devices; method of line; permittivity-dc electric field dependence; thin-film planar microwave devices; tunable planar devices; Dielectric substrates; Dielectric thin films; Ferroelectric materials; Microstrip; Microwave devices; Microwave theory and techniques; Permittivity; Sputtering; Thin film devices; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2005 European
Print_ISBN
2-9600551-2-8
Type
conf
DOI
10.1109/EUMC.2005.1608906
Filename
1608906
Link To Document