SIMOX material: from research to production

Author

Lamure, J.M. ; Biasse, B. ; Jaussaud, C. ; Papon, A.M. ; Michaud, J.F. ; Gusella, F. ; Pudda, C. ; Cartier, A.M. ; Soubie, A. ; Margail, J.

Author_Institution

CEA/DTA/LETI, Grenoble, France

fYear

1990

fDate

2-4 Oct 1990

Firstpage

45

Lastpage

46

Abstract

A 150 m² class 100 clean room, specially dedicated for separation by implantation of oxygen (SIMOX) wafer production on a semi-industrial basis, has been set up at LETI. This facility includes a very high current oxygen ion implantation machine (Eaton NV-200), a high temperature annealing furnace (temperature up to 1350°C, six inches capability), and nondestructive characterization tools. The characterization techniques include IR absorption, nuclear reaction analysis, and spectral reflectivity analysis that allows automatic measurement of silicon thickness down to 100 nm. Contamination levels are routinely checked by SIMS (secondary ion mass spectrometry) and the structure and crystalline quality are monitored using TEM and XTEM analysis. Different methods for producing thin silicon film SIMOX wafers-sacrificial oxidation, implantation through oxide, and reduction of the implantation energy-are briefly outlined

Keywords

annealing; chemical analysis by nuclear reactions and scattering; clean rooms; elemental semiconductors; integrated circuit technology; ion implantation; oxidation; secondary ion mass spectroscopy; semiconductor-insulator boundaries; silicon; spectrochemical analysis; thickness measurement; transmission electron microscope examination of materials; 1350 C; IR absorption; O₂⁺ implantation; SIMOX material; Si-SiO₂; TEM; XTEM; automatic measurement; clean room; contamination levels; crystalline quality; dislocation density; high temperature annealing furnace; implantation through oxide; ion implantation machine; nondestructive characterization tools; nuclear reaction analysis; reduction of implantation energy; sacrificial oxidation; secondary ion mass spectrometry; semi-industrial basis; spectral reflectivity analysis; thickness; wafer production; Annealing; Electromagnetic wave absorption; Furnaces; Ion implantation; Production; Reflectivity; Silicon; Spectral analysis; Temperature; Thickness measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

SOS/SOI Technology Conference, 1990., 1990 IEEE

Conference_Location

Key West, FL

Print_ISBN

0-87942-573-3

Type

conf

DOI

10.1109/SOSSOI.1990.145702

Filename

145702