Title :
Turn-off failure of IGBTs under clamped inductive load
Author :
Trivedi, Malay ; Shenai, Krishna
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA
Abstract :
This paper reports the mechanism of failure of IGBTs during clamped inductive switching stress. With the help of measurements and two-dimensional (2-D) numerical simulations, the turn-off failure of IGBTs under clamped inductive load is shown to occur due to thermally assisted carrier multiplication at the reverse biased planar p-base n-drift junction. The failure mechanism is unchanged even if the IGBT is susceptible to latch-up in static conditions
Keywords :
failure analysis; insulated gate bipolar transistors; load (electric); power bipolar transistors; semiconductor device models; semiconductor device reliability; semiconductor device testing; switching; 2-D numerical simulations; IGBT; clamped inductive load; clamped inductive switching stress; latch-up; measurements; reverse biased planar p-base n-drift junction; static conditions; thermally assisted carrier multiplication; turn-off failure mechanism; Circuit simulation; Failure analysis; Insulated gate bipolar transistors; Manufacturing; Numerical simulation; Stress; Switching circuits; Testing; Thyristors; Voltage;
Conference_Titel :
Power Electronics Specialists Conference, 1998. PESC 98 Record. 29th Annual IEEE
Conference_Location :
Fukuoka
Print_ISBN :
0-7803-4489-8
DOI :
10.1109/PESC.1998.703156
