Title :
High performance gate drive circuit of high voltage IPMs (HVIPMs)
Author :
Kimata, Masahiro ; Chikai, Satoru ; Tanaka, Takeshi ; Ishii, Kazufumi
Author_Institution :
Ind. Electron. & Syst. Lab., Mitsubishi Electr. Corp., Japan
Abstract :
This paper deals with a gate drive circuit of HVIPMs that is suitable for a snubberless inverter system. The proposed gate drive circuit changes the gate resistance in the middle of switching operation to reduce the variation ratio of collector current which causes the surge voltage. The simulation results and experimental results show that the surge voltage can be reduced without considerably increasing the switching loss
Keywords :
bridge circuits; driver circuits; insulated gate bipolar transistors; invertors; surge protection; switching circuits; IGBT; collector current variation ratio reduction; gate resistance; half bridge circuit; high performance gate drive circuit; high voltage IPM; snubberless inverter system; surge voltage reduction; switching loss; switching operation; Capacitors; Circuits; Diodes; Equations; Feedback; Insulated gate bipolar transistors; Resistors; Roentgenium; Voltage; Wiring;
Conference_Titel :
Power Electronics Specialists Conference, 1998. PESC 98 Record. 29th Annual IEEE
Conference_Location :
Fukuoka
Print_ISBN :
0-7803-4489-8
DOI :
10.1109/PESC.1998.703157
