Title :
Advances in recrystallization technology
Author :
Zavracky, P.M. ; Allen, L. ; Vu, D.P. ; Batty, M.
Author_Institution :
Kopin Corp., Taunton, MA, USA
Abstract :
A program is briefly reported aimed at the development of SOI material using a seeded zone melting recrystallization (ZMR) technique which is known as isolated silicon epitaxy (ISE). The ISE process has the flexibility required to meet the demands of a variety of different applications. Specifically, thin films of epitaxial Si (0.10 μm) on thin SiO2 (0.4 μm) layers are being produced for fully depleted CMOS applications. At the same time, low-defect thick-film Si (>2 μm) on thick oxide (1-2 μm) are being fabricated for bipolar applications
Keywords :
CMOS integrated circuits; bipolar integrated circuits; elemental semiconductors; incoherent light annealing; integrated circuit technology; recrystallisation; semiconductor epitaxial layers; semiconductor growth; semiconductor-insulator boundaries; silicon; solid phase epitaxial growth; zone melting; ISE; SOI; Si-SiO2; bipolar applications; fully depleted CMOS; isolated Si epitaxy; isolated silicon epitaxy; low-defect thick-film; seeded zone melting recrystallization; thick oxide; CMOS technology; Circuits; Conducting materials; Crystallization; Density measurement; Electric variables measurement; Epitaxial growth; Semiconductor films; Semiconductor thin films; Silicon on insulator technology;
Conference_Titel :
SOS/SOI Technology Conference, 1990., 1990 IEEE
Conference_Location :
Key West, FL
Print_ISBN :
0-87942-573-3
DOI :
10.1109/SOSSOI.1990.145706
