Advances in recrystallization technology

Author

Zavracky, P.M. ; Allen, L. ; Vu, D.P. ; Batty, M.

Author_Institution

Kopin Corp., Taunton, MA, USA

fYear

1990

fDate

2-4 Oct 1990

Firstpage

53

Lastpage

54

Abstract

A program is briefly reported aimed at the development of SOI material using a seeded zone melting recrystallization (ZMR) technique which is known as isolated silicon epitaxy (ISE). The ISE process has the flexibility required to meet the demands of a variety of different applications. Specifically, thin films of epitaxial Si (0.10 μm) on thin SiO₂ (0.4 μm) layers are being produced for fully depleted CMOS applications. At the same time, low-defect thick-film Si (>2 μm) on thick oxide (1-2 μm) are being fabricated for bipolar applications

Keywords

CMOS integrated circuits; bipolar integrated circuits; elemental semiconductors; incoherent light annealing; integrated circuit technology; recrystallisation; semiconductor epitaxial layers; semiconductor growth; semiconductor-insulator boundaries; silicon; solid phase epitaxial growth; zone melting; ISE; SOI; Si-SiO₂; bipolar applications; fully depleted CMOS; isolated Si epitaxy; isolated silicon epitaxy; low-defect thick-film; seeded zone melting recrystallization; thick oxide; CMOS technology; Circuits; Conducting materials; Crystallization; Density measurement; Electric variables measurement; Epitaxial growth; Semiconductor films; Semiconductor thin films; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

SOS/SOI Technology Conference, 1990., 1990 IEEE

Conference_Location

Key West, FL

Print_ISBN

0-87942-573-3

Type

conf

DOI

10.1109/SOSSOI.1990.145706

Filename

145706