Native silicon oxide agglomeration prior to solid-phase epitaxy using rapid thermal processing

Author

Leung, P.L. ; Knudsen, J.F. ; Swanson, D.J. ; Hill, B.J. ; Mayer, D.C.

Author_Institution

Aerospace Corp., El Segundo, CA, USA

fYear

1990

fDate

2-4 Oct 1990

Firstpage

57

Lastpage

58

Abstract

The effect of process parameters on the quality of recrystallized material using rapid thermal processing (RTP) was evaluated. Both X-ray rocking curve and Read camera analysis were used to verify the crystalline quality of the regrown material. It is shown that RTP is a viable method for agglomerating the interfacial oxide at a silicon/polysilicon boundary before epitaxial growth. The material quality was observed to improve with increasing RTP time and temperature cycles. The optimum thermal anneal cycle was 600°C for 18 h and 800°C for 3 h. The improvement in the number of defects over the previously used ion implantation process is about two orders of magnitude

Keywords

X-ray diffraction examination of materials; amorphisation; elemental semiconductors; incoherent light annealing; integrated circuit technology; ion implantation; recrystallisation annealing; semiconductor epitaxial layers; semiconductor growth; semiconductor-insulator boundaries; silicon; solid phase epitaxial growth; 18 h; 3 h; 600 C; 800 C; Read camera analysis; SOI; SPE preprocessing; Si; Si-SiO₂; X-ray rocking curve; amorphising implants; effect of process parameters; interfacial oxide agglomeration; lateral epitaxial overgrowth; optimum thermal anneal cycle; polysilicon boundary; quality; rapid thermal processing; recrystallized material; Annealing; Cameras; Crystalline materials; Crystallization; Epitaxial growth; Ion implantation; Rapid thermal processing; Silicon; Surface cleaning; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

SOS/SOI Technology Conference, 1990., 1990 IEEE

Conference_Location

Key West, FL

Print_ISBN

0-87942-573-3

Type

conf

DOI

10.1109/SOSSOI.1990.145708

Filename

145708