Fast turn characterization of SIMOX wafers

Author

Liu, S.T. ; Fechner, P.S. ; Roisen, R.L.

Author_Institution

Honeywell Solid State Electron. Center, Plymouth, MN, USA

fYear

1990

fDate

2-4 Oct 1990

Firstpage

61

Lastpage

62

Abstract

Physical and electrical properties of incoming low-defect SIMOX SOI wafers were characterized by fast turn techniques to determine their suitability for device applications. Physical properties were evaluated extensively with optical reflectometry and cross-sectional transmission electron microscopy. To facilitate evaluation of the back channel property with minimal processing. Schottky barrier MOS and simple regular MOS test structures were made. Schottky barrier behavior was noted in the characteristics near the origin and the conduction at zero gate bias. Back channel properties were evaluated first, and then the device was subjected to irradiation using a 10-keV ARACOR/4100 X-ray source with doses in the Mrad (SiO₂) region. The threshold voltage shift and the subthreshold voltage swing were measured. The radiation induced interface states in the Mrad (SiO₂) region were determined

Keywords

Schottky effect; X-ray effects; dislocation density; elemental semiconductors; insulated gate field effect transistors; integrated circuit technology; interface electron states; ion implantation; semiconductor-insulator boundaries; silicon; spectrochemical analysis; transmission electron microscope examination of materials; MOS test structures; SIMOX wafers; Schottky barrier MOS; Schottky barrier behavior; Si-SiO₂; back channel properties; back channel property; conduction at zero gate bias; cross-sectional transmission electron microscopy; electrical properties; fast turn techniques; optical reflectometry; physical properties; radiation induced interface states; subthreshold voltage swing; threshold voltage shift; Electron optics; Etching; MOSFETs; Optical microscopy; Reflectometry; Schottky barriers; Silicon; Solid state circuits; Testing; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOS/SOI Technology Conference, 1990., 1990 IEEE

Conference_Location

Key West, FL

Print_ISBN

0-87942-573-3

Type

conf

DOI

10.1109/SOSSOI.1990.145710

Filename

145710