X-ray characterization of silicon on insulator substrates

Author

Campisi, G.J. ; Ma, D.I. ; Quadri, S.B. ; Peckerar, M.C.

Author_Institution

US Naval Res. Lab., Washington, DC, USA

fYear

1990

fDate

2-4 Oct 1990

Firstpage

75

Lastpage

76

Abstract

An examination of the surface silicon layer of SOI substrates was made using X-ray double crystal rocking curve (XDCRC) and reflection topographic analysis (XRT). The original intent was to examine dislocations in SOI substrates-SIMOX, and BESOI (bond and etchback silicon-on-insulator). The properties of the superficial or surface silicon layer were characterized with reflection topography for the three SOI technologies, and these results were correlated with crystal quality measured by XDCRC. Reflection topography did not reveal surface imperfection, defects, or dislocations in SIMOX or BESOI, but XRT revealed the transmission of substrate strain or warpage into the surface silicon layer for all SOI samples. Rocking curves confirmed the high quality of the surface silicon layer

Keywords

X-ray diffraction examination of materials; elemental semiconductors; integrated circuit technology; ion implantation; recrystallisation; semiconductor-insulator boundaries; silicon; surface structure; BESOI; NDE; SIMOX; SOI substrates; Si-SiO₂; X-ray characterization; X-ray double crystal rocking curve; bond and etchback SOI; crystal quality; reflection topographic analysis; surface layers; transmission of substrate strain; warpage; zone melting recrystallisation; Government; Protection; Reflection; Silicon on insulator technology; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

SOS/SOI Technology Conference, 1990., 1990 IEEE

Conference_Location

Key West, FL

Print_ISBN

0-87942-573-3

Type

conf

DOI

10.1109/SOSSOI.1990.145716

Filename

145716