Title :
Interdiffusion of GaInNAs-GaAs quantum wells
Author :
Chan, Michael C Y ; Surya, C. ; Wai, P.K.A.
Author_Institution :
Dept. of Electron. & Inf. Eng., Hong Kong Polytech. Univ., China
Abstract :
The optical gain spectra for interdiffused GaxIn1-xN0.04As0.96-GaAs single quantum wells are studied theoretically using Fick´s law and the Fermi golden rule. Due to quantum well interdiffusion, the peak gain and the shift of the gain peaks vary with the diffusion lengths. The results show that the interdiffusion technique can be used to tune the operating wavelength for multi-wavelength laser diode applications without degradation of device performance
Keywords :
III-V semiconductors; chemical interdiffusion; gallium arsenide; indium compounds; laser tuning; quantum well lasers; semiconductor quantum wells; Fermi golden rule; Fick´s law; GaInN0.04As0.96-GaAs; GaInNAs-GaAs quantum wells; device performance; diffusion length; gain peak shift; interdiffused GaxIn1-xN0.04As 0.96-GaAs single quantum wells; interdiffusion; interdiffusion technique; multi-wavelength laser diode applications; operating wavelength tuning; optical gain spectra; peak gain; quantum well interdiffusion; Atom optics; Atomic layer deposition; Diode lasers; Gallium arsenide; Laser tuning; Lattices; Optical devices; Rapid thermal processing; Stimulated emission; Surface emitting lasers;
Conference_Titel :
Electron Devices Meeting, 2001. Proceedings. 2001 IEEE Hong Kong
Conference_Location :
Hong Kong
Print_ISBN :
0-7803-6714-6
DOI :
10.1109/HKEDM.2001.946909
