Title :
Low k adhesion issues in Cu/low k integration
Author :
Allada, Sudhakar
Author_Institution :
Sematech, Austin, TX, USA
Abstract :
Adhesion issues at different low k interfaces cause delamination during the copper CMP process. Delamination leads to other issues such as metal thinning, dielectric thinning and scratching. Critical fracture energy (Kc) between substrate and low k and between low k and cap oxide have been investigated. Process optimizations of the spin coating and curing steps will improve substrate adhesion. A statistically-designed experiment was used to identify and isolate the factors affecting cap adhesion and was used to optimize cap adhesion
Keywords :
adhesion; circuit optimisation; copper; delamination; design of experiments; dielectric thin films; heat treatment; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit yield; permittivity; spin coating; Cu; Cu/low k ILD integration; SiO2; cap adhesion; cap adhesion optimization; cap oxide; copper CMP process; critical fracture energy; curing; delamination; dielectric thinning; low k adhesion; low k interface adhesion; metal thinning; process optimizations; scratching; spin coating; statistically-designed experiment; substrate adhesion; Adhesives; Coatings; Copper; Curing; Delamination; Dielectric materials; Dielectric substrates; Etching; Ovens; Testing;
Conference_Titel :
Interconnect Technology, 1999. IEEE International Conference
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5174-6
DOI :
10.1109/IITC.1999.787109
