Low k adhesion issues in Cu/low k integration

Author

Allada, Sudhakar

Author_Institution

Sematech, Austin, TX, USA

fYear

1999

fDate

1999

Firstpage

161

Lastpage

163

Abstract

Adhesion issues at different low k interfaces cause delamination during the copper CMP process. Delamination leads to other issues such as metal thinning, dielectric thinning and scratching. Critical fracture energy (K_c) between substrate and low k and between low k and cap oxide have been investigated. Process optimizations of the spin coating and curing steps will improve substrate adhesion. A statistically-designed experiment was used to identify and isolate the factors affecting cap adhesion and was used to optimize cap adhesion

Keywords

adhesion; circuit optimisation; copper; delamination; design of experiments; dielectric thin films; heat treatment; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit yield; permittivity; spin coating; Cu; Cu/low k ILD integration; SiO₂; cap adhesion; cap adhesion optimization; cap oxide; copper CMP process; critical fracture energy; curing; delamination; dielectric thinning; low k adhesion; low k interface adhesion; metal thinning; process optimizations; scratching; spin coating; statistically-designed experiment; substrate adhesion; Adhesives; Coatings; Copper; Curing; Delamination; Dielectric materials; Dielectric substrates; Etching; Ovens; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology, 1999. IEEE International Conference

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-5174-6

Type

conf

DOI

10.1109/IITC.1999.787109

Filename

787109