Title :
Low temperature effective channel mobility in fully depleted and partially depleted SOI MOSFETs
Author :
Wang, Janet ; Kistler, Neal ; Woo, Jason ; Viswanathan, C.R. ; Vasudev, P.K.
Author_Institution :
California Univ., Los Angeles, CA, USA
Abstract :
The low-field effective mobility was studied for partially depleted and fully depleted silicon-on-insulator MOSFETs at temperatures from 300 K to 77 K. The transistors used in the study were fabricated on SIMOX wafers with a film thickness of 1800 Å and a buried oxide thickness of 3500 Å. The partially depleted device shows a greater improvement at low temperature. The mobility in both thin-film devices is essentially independent of inversion charge density, indicating a weak dependence on perpendicular electric field
Keywords :
carrier mobility; insulated gate field effect transistors; semiconductor-insulator boundaries; 300 to 77 K; SIMOX; SOI MOSFET; Si-SiO2; effective channel mobility; fully depleted; low temperature; low-field effective mobility; partially depleted; perpendicular electric field; Capacitance; Doping; Electrons; Iron; MOSFETs; Scattering; Silicon; Temperature dependence; Temperature distribution; Thin film devices;
Conference_Titel :
SOS/SOI Technology Conference, 1990., 1990 IEEE
Conference_Location :
Key West, FL
Print_ISBN :
0-87942-573-3
DOI :
10.1109/SOSSOI.1990.145723
