Low temperature effective channel mobility in fully depleted and partially depleted SOI MOSFETs

Author

Wang, Janet ; Kistler, Neal ; Woo, Jason ; Viswanathan, C.R. ; Vasudev, P.K.

Author_Institution

California Univ., Los Angeles, CA, USA

fYear

1990

fDate

2-4 Oct 1990

Firstpage

89

Lastpage

90

Abstract

The low-field effective mobility was studied for partially depleted and fully depleted silicon-on-insulator MOSFETs at temperatures from 300 K to 77 K. The transistors used in the study were fabricated on SIMOX wafers with a film thickness of 1800 Å and a buried oxide thickness of 3500 Å. The partially depleted device shows a greater improvement at low temperature. The mobility in both thin-film devices is essentially independent of inversion charge density, indicating a weak dependence on perpendicular electric field

Keywords

carrier mobility; insulated gate field effect transistors; semiconductor-insulator boundaries; 300 to 77 K; SIMOX; SOI MOSFET; Si-SiO₂; effective channel mobility; fully depleted; low temperature; low-field effective mobility; partially depleted; perpendicular electric field; Capacitance; Doping; Electrons; Iron; MOSFETs; Scattering; Silicon; Temperature dependence; Temperature distribution; Thin film devices;

fLanguage

English

Publisher

ieee

Conference_Titel

SOS/SOI Technology Conference, 1990., 1990 IEEE

Conference_Location

Key West, FL

Print_ISBN

0-87942-573-3

Type

conf

DOI

10.1109/SOSSOI.1990.145723

Filename

145723