DocumentCode
3434291
Title
2012 IEEE International Integrated Reliability Workshop (IIRW 2012)
fYear
2012
fDate
14-18 Oct. 2012
Firstpage
1
Lastpage
1
Abstract
The following topics are dealt with: BTI; resistive memory; advanced gate stack; product reliability; circuit reliability; BEoL; flash memory; bias temperature instability; PID; transistors; and III-V devices.
Keywords
III-V semiconductors; circuit reliability; flash memories; transistors; BEoL; BTI; III-V devices; PID; advanced gate stack; bias temperature instability; circuit reliability; flash memory; product reliability; resistive memory; transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report (IRW), 2012 IEEE International
Conference_Location
South Lake Tahoe, CA
ISSN
1930-8841
Print_ISBN
978-1-4673-2749-7
Type
conf
DOI
10.1109/IIRW.2012.6468898
Filename
6468898
Link To Document