DocumentCode :
3434291
Title :
2012 IEEE International Integrated Reliability Workshop (IIRW 2012)
fYear :
2012
fDate :
14-18 Oct. 2012
Firstpage :
1
Lastpage :
1
Abstract :
The following topics are dealt with: BTI; resistive memory; advanced gate stack; product reliability; circuit reliability; BEoL; flash memory; bias temperature instability; PID; transistors; and III-V devices.
Keywords :
III-V semiconductors; circuit reliability; flash memories; transistors; BEoL; BTI; III-V devices; PID; advanced gate stack; bias temperature instability; circuit reliability; flash memory; product reliability; resistive memory; transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2012 IEEE International
Conference_Location :
South Lake Tahoe, CA
ISSN :
1930-8841
Print_ISBN :
978-1-4673-2749-7
Type :
conf
DOI :
10.1109/IIRW.2012.6468898
Filename :
6468898
Link To Document :
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