Title :
Statistical modeling of MOS devices based on parametric test data for improved IC manufacturing
Author :
Liou, Juin J. ; Zhang, Qiang ; McMacken, John ; Thomson, J. Ross ; Stiles, Kevin ; Layman, Paul
Author_Institution :
Sch. of Electron. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA
Abstract :
In the manufacturing of VLSI circuits, engineering designs should take into consideration random variations arising from processing. In this paper, statistical modeling of MOS devices is reviewed, and effective and practical models are developed to predict the performance spread of MOS circuits due to the process variations. To illustrate their applications, the models are applied to a 0.25 μm CMOS technology, and measured data are included in support of the model calculations
Keywords :
CMOS integrated circuits; MOSFET; VLSI; circuit simulation; integrated circuit design; semiconductor device measurement; semiconductor device models; statistical analysis; 0.25 micron; CMOS technology; IC manufacturing; MOS circuits; MOS devices; VLSI circuit manufacturing; VLSI circuits; engineering designs; measured data; model calculations; parametric test data; performance spread; process variations; random process variations; statistical modeling; CMOS technology; Circuit simulation; Circuit testing; Data mining; Flowcharts; Integrated circuit modeling; Integrated circuit testing; MOS devices; Semiconductor device modeling; Virtual manufacturing;
Conference_Titel :
Electron Devices Meeting, 2001. Proceedings. 2001 IEEE Hong Kong
Conference_Location :
Hong Kong
Print_ISBN :
0-7803-6714-6
DOI :
10.1109/HKEDM.2001.946912
