A drain current model for MOSFET´s with pocket implantation

Author

Chang, Yallg-Hua ; Ho, Ching-suag ; Liao, Wen-Tui ; Liu, Chung-Che

Author_Institution

Nat. Yunlin Univ. of Sci. & Technol., Taiwan

fYear

2001

fDate

2001

Firstpage

42

Lastpage

45

Abstract

A physics-based drain current model with short-channel effect and reverse short-channel effect in pocket-implanted MOSFETs has been developed. The model is able to predict the effect of the pocket implant on threshold voltage and drain current in linear and saturated regions. The validity of the model has been verified by measurement and simulation. This result is beneficial to optimization of implant dosage during processing

Keywords

MOSFET; doping profiles; electric current; ion implantation; optimisation; semiconductor device measurement; semiconductor device models; MOSFET; drain current; drain current model; implant dosage optimization; linear region; measurement; model validity; physics-based drain current model; pocket implant effect; pocket implantation; pocket-implanted MOSFETs; reverse short-channel effect; saturated region; short-channel effect; simulation; threshold voltage; Doping; Implants; MOSFET circuits; Neodymium; Semiconductor process modeling; Solid modeling; Testing; Threshold voltage; Virtual manufacturing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. Proceedings. 2001 IEEE Hong Kong

Conference_Location

Hong Kong

Print_ISBN

0-7803-6714-6

Type

conf

DOI

10.1109/HKEDM.2001.946914

Filename

946914