Title :
Characterization of the broadband transmission behavior of interconnections on silicon substrates
Author :
Zaage, S. ; Grotelüschen, E.
Author_Institution :
Hannover Univ., Germany
Abstract :
Some characteristics of the transmission behavior of interconnections on conductive silicon substrates are presented. With regard to the signal propagation on high-speed digital circuits the broadband behavior of the lines is of special interest. The characteristic impedance and the propagation constant of the lines are determined experimentally by microwave measurements. The influence of the line geometry, the substrate resistivity and the signal frequency on the transmission behavior are clarified. Based on the results of the measurements, the suitability of the conventional RLC line model for time-domain simulations of the transmission characteristics of interconnections on silicon substrates is investigated.
Keywords :
VLSI; digital integrated circuits; electric impedance; integrated circuit technology; packaging; time-domain analysis; transmission line theory; RLC line model; WSI; broadband transmission behavior; characteristic impedance; conductive Si substrates; high-speed digital circuits; interconnections; line geometry; microwave measurements; propagation constant; signal frequency; signal propagation; substrate resistivity; time-domain simulations; wafer scale integration; Conductivity; Digital circuits; Frequency; Geometry; Impedance measurement; Integrated circuit interconnections; Microwave measurements; Microwave propagation; Propagation constant; Silicon;
Conference_Titel :
Wafer Scale Integration, 1993. Proceedings., Fifth Annual IEEE International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0867-0
DOI :
10.1109/ICWSI.1993.255251
