Title :
Elimination of kink effect in fully depleted buried channel SOI MOSFET based on silicon direct bonding technology
Author_Institution :
Southeast Univ., Nanjing
Abstract :
A new SOI fully depleted buried channel MOSFET (FD BCMOS) has been developed which is different from conventional surface buried channel MOS devices in which a pn junction exists at the channel surface. Moreover, the pn junction is totally eliminated in the device structure. Numerical simulation and practical fabrication have demonstrated that no kink effect is seen and the device has excellent performance for VLSI applications due to the absence of the pn junction and superior material quality prepared by silicon wafer direct bonding technology
Keywords :
VLSI; insulated gate field effect transistors; semiconductor-insulator boundaries; SOI MOSFET; Si-SiO2; VLSI; direct bonding technology; fabrication; fully depleted buried channel; kink effect elimination; performance; simulation; MOS devices; MOSFET circuits; Microelectronics; Numerical simulation; Semiconductor films; Silicon on insulator technology; Substrates; Threshold voltage; Transconductance; Wafer bonding;
Conference_Titel :
SOS/SOI Technology Conference, 1990., 1990 IEEE
Conference_Location :
Key West, FL
Print_ISBN :
0-87942-573-3
DOI :
10.1109/SOSSOI.1990.145728
