Title :
Modeling of thin film depletion-mode SOI MOSFETs
Author :
Balestra, F. ; Benachir, M. ; Ghibaudo, G. ; Brini, J.
Author_Institution :
Lab. de Phys. des Composants a Semicond., Inst. Nat. Polytech., Grenoble, France
Abstract :
No reliable analytical model exists for the case of fully depleted thin film depletion-mode (DM) SOI MOSFETs. The coupling between the front and back interfaces is particularly important in the weak accumulation regime. The authors propose analytical models for fully depleted DM SOI MOSFETs, by taking into consideration all the parameters of the SOI structure. The case of two or three interfaces (with a Si substrate) can be modeled
Keywords :
insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; SOI MOSFETs; Si-SiO2; analytical models; fully depleted; thin film depletion-mode; weak accumulation regime; Capacitance; Delta modulation; Doping profiles; Electron mobility; MOSFETs; Semiconductor films; Semiconductor process modeling; Transconductance; Transistors; Voltage;
Conference_Titel :
SOS/SOI Technology Conference, 1990., 1990 IEEE
Conference_Location :
Key West, FL
Print_ISBN :
0-87942-573-3
DOI :
10.1109/SOSSOI.1990.145732
