Annealing effects on ultrathin MOS capacitors

Author

Ng, Alvin Chi-Hai ; Jun Xu ; Xu, Jun ; Cheung, W.Y.

Author_Institution

Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Shatin, China

fYear

2001

fDate

2001

Firstpage

101

Lastpage

105

Abstract

Silicon oxide with thickness of less than 9 nm is fabricated by tube furnace oxidation. Nitrogen is added to dilute the oxidation rate. Aluminum dots with a radius of 0.05 cm are deposited on the oxide. High frequency capacitance-voltage (HFC-V), conductance-voltage (G-V) and current-voltage (I-V) characteristics are measured. Annealing under nitrogen atmosphere is carried out with different times and at different temperature. Densities of the interface states before and after annealing are compared. After annealing, a decrease in density of the interface states is found. Experiments show that 450°C annealing for 30 minutes has the lowest density of the interface states

Keywords

CMOS integrated circuits; MOS capacitors; annealing; capacitance; electric admittance; electric current; electronic density of states; integrated circuit testing; interface states; oxidation; 0.05 cm; 30 min; 450 C; 9 nm; CMOS transistors; G-V characteristics; HFC-V characteristics; I-V characteristics; N₂; SiO₂-Si; aluminum dots; anneal temperatures; anneal time; annealing; annealing effects; conductance-voltage characteristics; current-voltage characteristics; high frequency capacitance-voltage characteristics; interface state density; nitrogen anneal atmosphere; nitrogen dilution; oxidation rate; silicon oxide thickness; tube furnace oxidation; ultrathin MOS capacitors; Aluminum; Annealing; Capacitance-voltage characteristics; Frequency; Furnaces; Interface states; MOS capacitors; Nitrogen; Oxidation; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. Proceedings. 2001 IEEE Hong Kong

Conference_Location

Hong Kong

Print_ISBN

0-7803-6714-6

Type

conf

DOI

10.1109/HKEDM.2001.946928

Filename

946928